The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Oct. 23, 2018
Applicant:

Soraa, Inc., Fremont, CA (US);

Inventors:

Michael J. Cich, Fremont, CA (US);

Aurelien J. F. David, San Francisco, CA (US);

Christophe Hurni, Fremont, CA (US);

Rafael Aldaz, Pleasanton, CA (US);

Michael Ragan Krames, Mountain View, CA (US);

Assignee:

SORAA, INC., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/02 (2010.01); H01L 33/32 (2010.01); H01L 33/60 (2010.01); F21V 29/70 (2015.01); H01L 33/16 (2010.01); H01L 33/20 (2010.01); H01L 33/40 (2010.01); H01L 33/48 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); F21V 29/70 (2015.01); H01L 33/02 (2013.01); H01L 33/16 (2013.01); H01L 33/20 (2013.01); H01L 33/405 (2013.01); H01L 33/486 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 2224/14 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0066 (2013.01);
Abstract

High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm.


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