The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Nov. 07, 2018
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Huan-Yu Lai, Hsinchu, TW;

Li-Chi Peng, Hsinchu, TW;

Assignee:

EPISTAR Corporation, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/14 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 33/00 (2010.01); H01L 33/04 (2010.01);
U.S. Cl.
CPC ...
H01L 33/145 (2013.01); H01L 33/0062 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/14 (2013.01); H01L 33/30 (2013.01); H01L 33/305 (2013.01); H01L 33/32 (2013.01); H01L 33/325 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure on the active region; a first In-containing layer between the active region and the electron blocking structure; and a second In-containing layer on the electron blocking structure; wherein the first In-containing layer has a first indium content, the second In-containing layer has a second indium content, and the second indium content is different from the first indium content.


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