The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Feb. 16, 2017
Lextar Electronics Corporation, Hsinchu, TW;
Shiou-Yi Kuo, Kaohsiung, TW;
Shih-Huan Lai, Changhua County, TW;
Lextar Electronics Corporation, Hsinchu, TW;
Abstract
A light emitting diode structure includes a first type semiconductor layer, a second type semiconductor layer, an active layer disposed therebetween, and a reflective stacked layer. The reflective stacked layer includes a first reflective layer and a second reflective layer. The first reflective layer is disposed at a side of the second type semiconductor layer opposing the active layer. The second reflective layer is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer. A vertical projection area of the second reflective layer on the second-type semiconductor layer is greater than that of the first reflective layer thereon. The second reflective layer has a better resistance to migration than the first reflective layer.