The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Oct. 23, 2016
Applicant:
Sensor Electronic Technology, Inc., Columbia, SC (US);
Inventors:
Michael Shur, Latham, NY (US);
Grigory Simin, Columbia, SC (US);
Alexander Dobrinsky, Loudonville, NY (US);
Assignee:
Sensor Electronic Technology, Inc., Columbia, SC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/64 (2010.01); G06F 30/30 (2020.01); H01L 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/0232 (2014.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/0392 (2006.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 33/08 (2010.01); H01L 33/12 (2010.01); H01L 33/30 (2010.01); H01L 33/42 (2010.01); H01L 33/46 (2010.01); H01L 33/38 (2010.01); H01S 5/30 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); G06F 30/30 (2020.01); H01L 31/02005 (2013.01); H01L 31/02327 (2013.01); H01L 31/022466 (2013.01); H01L 31/03048 (2013.01); H01L 31/0392 (2013.01); H01L 31/035227 (2013.01); H01L 31/035236 (2013.01); H01L 31/1848 (2013.01); H01L 31/1852 (2013.01); H01L 33/007 (2013.01); H01L 33/08 (2013.01); H01L 33/12 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01); H01L 33/642 (2013.01); H01L 33/382 (2013.01); H01L 2933/0091 (2013.01); H01S 5/3054 (2013.01); H01S 5/3086 (2013.01); H01S 5/34333 (2013.01);
Abstract
A heterostructure for use in an electronic or optoelectronic device is provided. The heterostructure includes one or more semiconductor layers containing columnar nanostructures (e.g., nanowires). The nanowire semiconductor layer can include sub-layers of varying composition, at least one of which is an active layer that can include quantum wells and barriers. A heterostructure can include n-type and p-type semiconductor contact layers adjacent to the nanowire semiconductor layer containing the active layer.