The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Sep. 24, 2013
Optitune Oy, Oulu, FI;
Ari Kärkkäinen, Singapore, SG;
Milja Hannu-Kuure, Oulu, FI;
Henna Järvitalo, Oulu, FI;
Paul Williams, Singapore, SG;
Jarkko Leivo, Oulu, FI;
Admir Hadzic, Oulu, FI;
Jianhui Wang, Singapore, SG;
OPTITUNE OY, Oulu, FI;
Abstract
A method of passivating a silicon substrate for use in a photovoltaic device, comprising providing a silicon substrate having a bulk and exhibiting a front surface and a rear surface, and forming by liquid phase application a dielectric layer on at least said rear surface. The dielectric layer formed at the rear surface is capable of acting as a reflector to enhance reflection of light into the bulk of the silicon substrate, and the dielectric layer is capable of releasing hydrogen into the bulk as well as onto a surface of the silicon substrate in order to provide hydrogenation and passivation. The present invention provides an inexpensive, low cost method of improving the electrical and/or optical performance of photovoltaic devices through the application of coating chemicals onto the backside of the silicon substrate.