The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Jun. 27, 2017
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventor:
Walter Rieger, Arnoldstein, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7803 (2013.01); H01L 21/82345 (2013.01); H01L 21/823462 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 29/0634 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/41758 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/42364 (2013.01); H01L 29/66356 (2013.01); H01L 29/66545 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7391 (2013.01); H01L 29/7802 (2013.01); H01L 29/7804 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/41766 (2013.01);
Abstract
A semiconductor device includes a plurality of first field-effect structures each including a polysilicon gate arranged on and in contact with a first gate dielectric, and a plurality of second field-effect structures each including a metal gate arranged on and in contact with a second gate dielectric. The plurality of first field-effect structures and the plurality of second field-effect structures form part of a power semiconductor device.