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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10692978 B1

PDFFull Text
Date of Patent:
Jun. 23, 2020

Filed:

May. 15, 2015

Sic semiconductor device with insulating film and organic insulating layer

Applicant:

Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;

Inventors:

Katsuhisa Nagao, Kyoto, JP;

Hidetoshi Abe, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

David Chen

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/47 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/872 (2006.01); H01L 23/60 (2006.01); H01L 29/06 (2006.01); H01L 23/535 (2006.01); H01L 29/36 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 23/535 (2013.01); H01L 23/60 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/36 (2013.01); H01L 29/4236 (2013.01); H01L 29/47 (2013.01); H01L 29/51 (2013.01); H01L 29/739 (2013.01); H01L 29/78 (2013.01); H01L 29/7811 (2013.01); H01L 29/872 (2013.01); H01L 23/3171 (2013.01);
Abstract

According to the present invention, a semiconductor device includes a first conductivity type SiC layer, an electrode that is selectively formed upon the SiC layer, and an insulator that is formed upon the SiC layer and that extends to a timing region that is set at an end part of the SiC layer. The insulator includes an electrode lower insulating film that is arranged below the electrode, and an organic insulating layer that is arranged so as to cover the electrode lower insulating film. The length (A) of the interval wherein the organic insulating layer contacts the SiC layer is 40 μm or more, and the lateral direction distance (B) along the electrode lower insulating layer between the electrode and SiC layer is 40 μm or more.

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