The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Jun. 18, 2015
Applicant:

Nanoco Technologies Ltd., Manchester, GB;

Inventors:

Frederick Withers, Manchester, GB;

Konstantin Novoselov, Manchester, GB;

Assignee:

Nanoco Technologies Ltd., Manchester, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/267 (2006.01); H05B 33/14 (2006.01); H05B 33/20 (2006.01); H05B 33/26 (2006.01); H01L 33/06 (2010.01); H01L 33/26 (2010.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 33/32 (2010.01); H01L 29/41 (2006.01); H01L 33/34 (2010.01);
U.S. Cl.
CPC ...
H01L 29/152 (2013.01); H01L 29/267 (2013.01); H01L 33/06 (2013.01); H01L 33/26 (2013.01); H05B 33/145 (2013.01); H05B 33/20 (2013.01); H05B 33/26 (2013.01); H01L 29/1606 (2013.01); H01L 29/24 (2013.01); H01L 29/413 (2013.01); H01L 33/32 (2013.01); H01L 33/34 (2013.01);
Abstract

The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors, photovoltaic devices and so on. In the present invention, the complexity and functionality of such van der Waals heterostructures is taken to the next level by introducing quantum wells (QWs) engineered with one atomic plane precision. We describe light-emitting diodes (LEDs) made by stacking metallic graphene, insulating hexagonal boron nitride and various semiconducting monolayers into complex but carefully designed sequences.


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