The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Nov. 20, 2018
Canon Kabushiki Kaisha, Tokyo, JP;
Tasuku Kaneda, Kawasaki, JP;
Toshihiro Shoyama, Kawasaki, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A photoelectric conversion device includes photoelectric converter arranged in semiconductor substrate made of silicon and is and transistor arranged on surface of the substrate. The photoelectric converter includes first region of a first conductivity type, configured to accumulate charges, and second region of second conductivity type. The first region is arranged between the surface and the second region. The substrate includes third region as source and/or drain of the transistor. The substrate includes, in position which is below the third region and is apart from the third region, impurity region containing group 14 element other than silicon. Depth from the surface of peak position in density distribution of the group 14 element in the impurity region is smaller than depth from the surface of peak position in density distribution of majority carrier in the second region.