The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Mar. 01, 2017
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Kyohei Mizuta, Kanagawa, JP;

Takuya Maruyama, Kanagawa, JP;

Yukihiro Ando, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14623 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14614 (2013.01); H01L 27/14645 (2013.01);
Abstract

The present disclosure relates to a solid-state imaging element capable of suppressing stray light with respect to a charge storage unit such as an FD, and an electronic device. According to an aspect of the present disclosure, a solid-state imaging element constituted by many pixels includes a photoelectric conversion unit formed for each of the pixels and that converts incident light into a charge; a charge storage unit that temporarily holds the converted charge; and a first light shielding unit formed between the pixels and having a predetermined length in a thickness direction of a substrate. The charge storage unit is formed below a cross portion where the first light shielding unit formed between pixels adjacent to each other in a longitudinal direction crosses the first light shielding unit formed between pixels adjacent to each other in a lateral direction. The present disclosure can be applied to, for example, a backside irradiation type CMOS image sensor.


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