The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Oct. 25, 2018
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventors:
Yung Jun Kim, Seoul, KR;
Won Hyo Cha, Cheongju-si, KR;
Byung Soo Park, Suwon-si, KR;
Sang Tae Ahn, Seoul, KR;
Sung Jae Chung, Seoul, KR;
Assignee:
SK hynix Inc., Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 27/1157 (2017.01); H01L 27/11573 (2017.01); H01L 27/11526 (2017.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 29/0649 (2013.01); H01L 29/4916 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01);
Abstract
A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.