The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Jan. 26, 2018
Board of Regents, the University of Texas System, Austin, TX (US);
Zeshan Ahmad, Richardson, TX (US);
Kenneth K. O, Richardson, TX (US);
Other;
Abstract
An accumulation-mode MOS varactor is formed with a standard CMOS process and having an anti-symmetric-CV curve. The asymmetric varactor (ASVAR) can efficiently generate even-order harmonics while simultaneously suppressing odd-order harmonics over broad bandwidths. This is achieved without degradation of dynamic cut-off frequency. The improved cut-off frequency of the asymmetric varactor results in efficient even-harmonic generation well into sub-millimeter or terahertz frequencies. This and the inherent adaptive-CV features of the asymmetric varactor result in even-harmonic generation with process variation resilience and can also be utilized for frequency response shaping and for optimizing performance at various driving conditions.