The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Dec. 02, 2018
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Tsang-Po Yang, New Taipei, TW;

Shian-Jyh Lin, New Taipei, TW;

Jui-Hsiu Jao, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5252 (2013.01); H01L 27/108 (2013.01);
Abstract

A semiconductor structure includes a first anti-fuse structure, a second anti-fuse structure and a first metal layer. The second anti-fuse structure is disposed over the first anti-fuse structure. The first metal layer is between the first anti-fuse structure and the second anti-fuse structure. A first contact is disposed between the first anti-fuse structure and the first metal layer to connect thereof. A second contact is disposed between the second anti-fuse structure and the first metal layer to connect thereof.


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