The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Apr. 24, 2017
Technische Hochschule Ingolstadt, Ingolstadt, DE;
Gordon Elger, Ingolstadt, DE;
Johannes Pforr, München, DE;
Technische Hochschule Ingolstadt, Ingolstadt, DE;
Abstract
A semiconductor package (″), the package (″) comprising a first substrate () comprising at a front cavity side (') a plurality of cavities (′), each of the cavities (′) having a bottom wall () and side walls (), and having a conductive path () forming an electric contact surface () located at the inner side of the bottom wall () of the cavity (′), a plurality of semiconductor elements (), each of the semiconductor elements () comprising a first electric contact surface () on a first side () and a second electric contact surface () on a second side () opposite to the first side (), wherein at least one of the semiconductor elements () is placed within a corresponding cavity (′) at the front cavity side (′) of the first substrate (), wherein the first electric contact () of the semiconductor element () and the electric contact surface () at the inner side of the bottom wall () of the corresponding cavity (′) are electrically conductive bonded in a material-locking manner, and a second substrate (), the second substrate () being attached with a connection side () to the front cavity side (′) of the first substrate () thereby encapsulating the semiconductor elements () located within the corresponding cavities (′) at the front cavity side (′) of the first substrate ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile