The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Mar. 01, 2019
International Business Machines Corporation, Armonk, NY (US);
Wanki Kim, Chappaqua, NY (US);
Chung Hon Lam, Peekskill, NY (US);
Yu Zhu, Rye Brook, NY (US);
Yujun Xie, New Haven, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Techniques for void reduction in phase change memory (PCM) devices are provided. In one embodiment, the system is provided that comprises a PCM device comprising a first electrode and a second electrode. The system can further comprise a first connector coupled to the first electrode and that applies a negative voltage to the first electrode, and a second connector coupled to the second electrode and that applies a ground voltage to the second electrode, wherein applying the negative voltage to the first electrode and applying the ground voltage to the second electrode comprises negatively biasing the PCM device. The system can further comprise the first connector applying the positive voltage to the first electrode, and the second connector applying a ground voltage to the second electrode, wherein applying the positive voltage to the first electrode and applying the ground voltage to the second electrode comprises positively biasing the PCM device.