The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Nov. 19, 2018
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventor:

Ali Al-Shamma, San Jose, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 16/26 (2006.01); G06F 17/16 (2006.01); G11C 16/10 (2006.01); G06N 3/02 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G06F 17/16 (2013.01); G06N 3/02 (2013.01); G11C 11/5642 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01);
Abstract

Various examples for accelerating multiplication operations are presented, which can be employed in neural network operations, among other applications. In one example, a circuit comprises a non-volatile memory cell, and an input circuit coupled to a gate terminal of the non-volatile memory cell. The input circuit is configured to ramp a control voltage applied to the gate terminal at a ramp rate representing a multiplicand value. An output circuit coupled to an output terminal of the non-volatile memory cell and is configured to generate an output pulse based on the control voltage satisfying a threshold voltage of the non-volatile memory cell, where the output pulse has a duration comprising the multiplicand value multiplied by a multiplier value represented by the threshold voltage.


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