The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Sep. 05, 2017
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventors:
Shan Li, Kanagawa, JP;
Keigo Hara, Kanagawa, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01); G11C 11/408 (2006.01); G11C 11/406 (2006.01); G11C 11/4074 (2006.01); G11C 11/4099 (2006.01); G11C 8/08 (2006.01); G11C 11/4091 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 7/14 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 7/04 (2013.01); G11C 8/08 (2013.01); G11C 11/4074 (2013.01); G11C 11/4091 (2013.01); G11C 11/4099 (2013.01); G11C 11/40626 (2013.01); G11C 11/56 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 7/14 (2013.01);
Abstract
A semiconductor memory device includes a memory cell transistor, a word line coupled to the memory cell transistor, a temperature detection element configured to detect a temperature, and a control unit. The control unit is configured to determine, responsive to receiving a first command from a controller, a compensation value for a read voltage designated by the controller according to the detected temperature, and to lock updating of the compensation value.