The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2020
Filed:
Dec. 19, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventor:
Il-su Han, Incheon, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/07 (2006.01); G06F 3/06 (2006.01); G11C 7/00 (2006.01); G11C 11/56 (2006.01); G06F 11/10 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0611 (2013.01); G06F 3/0634 (2013.01); G06F 3/0658 (2013.01); G06F 3/0673 (2013.01); G06F 11/073 (2013.01); G06F 11/0793 (2013.01); G06F 11/1068 (2013.01); G11C 7/00 (2013.01); G11C 11/5642 (2013.01); G11C 16/349 (2013.01);
Abstract
A read operation method of a nonvolatile memory includes selecting at least a first selection defence code from among a plurality of defence codes by using read voltage level determination information and read environment information, the read environment information including values respectively corresponding to a plurality of factors; determining a level of a read voltage for performing a read operation based on the first selection defence code; and performing the read operation by using the read voltage having the determined level.