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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10690975 B1

PDFFull Text
Date of Patent:
Jun. 23, 2020

Filed:

Mar. 24, 2017

Active matrix substrate, manufacturing method therefor and display device

Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventors:

Tohru Okabe, Sakai, JP;

Hirohiko Nishiki, Sakai, JP;

Shinji Nakajima, Sakai, JP;

Izumi Ishida, Sakai, JP;

Shogo Murashige, Sakai, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, JP;

Attorney:

Keating & Bennett, LLP

Primary Examiner:

Anthony Ho

Assistant Examiner:

Kevin Quinto

Int. Cl.
CPC ...
G02F 1/1362 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); G02F 1/1365 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); G02F 1/13 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
G02F 1/136204 (2013.01); G02F 1/1365 (2013.01); G02F 1/136227 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02664 (2013.01); H01L 27/1225 (2013.01); H01L 27/1244 (2013.01); H01L 27/1248 (2013.01); H01L 29/42356 (2013.01); H01L 29/4908 (2013.01); H01L 29/518 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); G02F 1/1309 (2013.01); H01L 27/0251 (2013.01);
Abstract

Provided are an active-matrix substrate, a method for manufacturing the same, and a display device, which render it possible to inhibit electrostatic discharge from occurring during the process of manufacturing a display panel and suppress manufacturing cost. An IGZO film, which is positioned between a silicon oxide film included in a gate insulating film and an etch-stop layer, is annealed at 200 to 350° C. after a passivation film for protecting a TFT is formed. As a result, the passivation film is annealed, and the IGZO film is changed from a conductor to a semiconductor. Consequently, it is not only possible to suppress the occurrence of ESD, but also possible to eliminate the need to sever an electrostatic discharge prevention circuit from a display panel, resulting in a reduced cost of manufacturing a display device.

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