The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Dec. 20, 2018
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Joris Van Campenhout, Brussels, BE;

Ashwyn Srinivasan, Heverlee, BE;

Bernardette Kunert, Wilsele, BE;

Maria Ioanna Pantouvaki, Kessel-lo, BE;

Assignees:

IMEC vzw, Leuven, BE;

Universiteit Gent, Ghent, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/13 (2006.01); G02F 1/025 (2006.01); G02B 6/12 (2006.01); G02F 1/017 (2006.01);
U.S. Cl.
CPC ...
G02B 6/13 (2013.01); G02B 6/131 (2013.01); G02F 1/025 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12128 (2013.01); G02B 2006/12178 (2013.01); G02F 2001/01791 (2013.01);
Abstract

A III-V semiconductor waveguide nanoridge structure having a narrow supporting base with a freestanding wider body portion on top, is disclosed. In one aspect, the III-V waveguide includes a PIN diode. The waveguide comprises a III-V semiconductor waveguide core formed in the freestanding wider body portion; at least one heterojunction incorporated in the III-V semiconductor waveguide core; a bottom doped region of a first polarity positioned at a bottom of the narrow supporting base, forming a lower contact; and an upper doped region of a second polarity, forming an upper contact. The upper contact is positioned in at least one side wall of the freestanding wider body portion.


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