The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Aug. 08, 2017
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventor:

Hui Tian, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/20 (2006.01); G01T 1/208 (2006.01); H01L 27/146 (2006.01); H01L 31/0288 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/20 (2006.01); H01L 31/0376 (2006.01);
U.S. Cl.
CPC ...
G01T 1/2006 (2013.01); G01T 1/208 (2013.01); H01L 27/14612 (2013.01); H01L 27/14636 (2013.01); H01L 27/14658 (2013.01); H01L 27/14663 (2013.01); H01L 27/14689 (2013.01); H01L 27/14692 (2013.01); H01L 31/0288 (2013.01); H01L 31/02161 (2013.01); H01L 31/022408 (2013.01); H01L 31/03762 (2013.01); H01L 31/202 (2013.01);
Abstract

A X-ray detector includes: a base substrate; a plurality of detection modules disposed on the base substrate, wherein the detection module includes a thin film transistor disposed on the base substrate, an insulating layer with a via hole disposed on the thin film transistor and a photosensitive structure disposed on the insulating layer, a first electrode of the thin film transistor is electrically connected to the photosensitive structure through the via hole on the insulating layer, and the first electrode is a source or a drain electrode of the thin film transistor; and a scintillation layer disposed on the detection module. In the present disclosure, by disposing the photosensitive structure and the TFT in different layers, the photosensitive area of the photosensitive structure is enlarged, and it will not be affected by the TFT.


Find Patent Forward Citations

Tian, Hui. (2020). X-ray detector and manufacturing method thereof (U.S. Patent No. 10690786). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10690786

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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