The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Jul. 02, 2019
Applicant:
Newport Fab, Llc, Newport Beach, CA (US);
Inventors:
Roda Kanawati, Irvine, CA (US);
Paul D. Hurwitz, Irvine, CA (US);
Assignee:
Newport Fab, LLC, Newport Beach, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/40 (2015.01); H04B 1/44 (2006.01); H04B 1/04 (2006.01); H04B 1/18 (2006.01); H01L 21/768 (2006.01); H01L 29/786 (2006.01); H03F 3/189 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H04B 1/44 (2013.01); H01L 21/7682 (2013.01); H01L 29/7833 (2013.01); H01L 29/78618 (2013.01); H03F 3/189 (2013.01); H04B 1/0458 (2013.01); H04B 1/18 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01);
Abstract
A radio frequency (RF) transistor includes a drain, a source, and a gate. A first dielectric having a first dielectric constant is over the source and the drain. A gap is in the first dielectric and over the gate, the gap extending to the gate. A second dielectric is situated in the gap. The second dielectric has a second dielectric constant substantially less than the first dielectric constant so as to reduce a Cof the RF transistor. The RF transistor can be part of a stack of RF transistors in an RF switch. The RF switch can be situated between an antenna and an amplifier.