The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2020

Filed:

Nov. 22, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Yaron Shany, Kfar Saba, IR;

Jun Jin Kong, Yongin-Si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M 13/00 (2006.01); H03M 13/15 (2006.01); H03M 13/29 (2006.01); H03M 13/37 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
H03M 13/154 (2013.01); H03M 13/157 (2013.01); H03M 13/158 (2013.01); H03M 13/1515 (2013.01); H03M 13/29 (2013.01); H03M 13/373 (2013.01); G06F 11/108 (2013.01);
Abstract

A method for repairing a single erasure in a Reed Solomon code in a system of a plurality of n storage nodes and a controller, wherein a content of each storage node is a codeword and each node stores a vector v. The method includes identifying a failed storage node; transmitting an index of the failed storage node to each surviving storage node; multiplying the content of each node i by a j-th component of a vector that is a permutation of elements of vector v that correspond to the surviving storage nodes; determining a trace map of the result and converting the result from an m×r bit representation into a reduced representation of r bits; reconstructing the content of the failed storage node from the reduced representation of each surviving node's content; and outputting the reconstructed content of the failed storage node.


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