The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Jul. 10, 2019
Stichting Imec Nederland, AE Eindhoven, NL;
Roland Van Wegberg, Leuven, BE;
STICHTING IMEC NEDERLAND, AE Eindhoven, NL;
Abstract
A latched comparator comprises a pre-amplifier stage with a positive input (V), a negative input (V); and a differential output (ΔV) comprising a first output (V) and a second output (V), the pre-amplifier stage comprising a first cascode pair, comprising a first amplifying transistor (MN) and a first cascode transistor (MN) connected at a first cascode node, the first amplifying transistor (MN) being controlled by the positive input (V) and the first cascode transistor (MN) being connected, opposite to the first cascode node, to the first output (V); a second cascode pair, comprising a second amplifying transistor (MN) and a second cascode transistor (MN) connected at a second cascode node, the second amplifying transistor (MN) being controlled by the negative input (V) and the second cascode transistor (MN) being connected, opposite to the second cascode node, to the second output (V); a first gain-boosting transistor (MN) connected between the first output (V) and the first cascode node; and a second gain-boosting transistor (MN) connected between the second output (V) and the second cascode node, wherein the first gain-boosting transistor (MN) and the second gain-boosting transistor (MN) are cross-coupled, so that the first gain-boosting transistor (MN) is controlled by the second output (V) and the second gain-boosting transistor (MN) is controlled by the first output (V).