The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Mar. 06, 2015
Applicants:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Universite Paris Sud, Orsay, FR;
Inventors:
Mathias Prost, Tremblay-En-Franc, FR;
Moustafa El Kurdi, L'hay-Les-Roses, FR;
Philippe Boucaud, Paris, FR;
Frederic Boeuf, Le Versoud, FR;
Assignee:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/10 (2006.01); G02B 6/12 (2006.01); H01S 5/32 (2006.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01); H01S 5/227 (2006.01); H01S 5/30 (2006.01); G02B 6/136 (2006.01); G02B 6/10 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3223 (2013.01); H01S 5/021 (2013.01); H01S 5/0424 (2013.01); H01S 5/1003 (2013.01); H01S 5/2275 (2013.01); H01S 5/3086 (2013.01); H01S 5/3202 (2013.01); G02B 6/10 (2013.01); G02B 6/136 (2013.01); G02B 2006/121 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12121 (2013.01); G02B 2006/12128 (2013.01); G02B 2006/12176 (2013.01);
Abstract
A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.