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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10686091 B1

PDFFull Text
Date of Patent:
Jun. 16, 2020

Filed:

Feb. 10, 2017

Semiconductor device

Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Jung Hun Oh, Seoul, KR;

Hyung Jo Park, Seoul, KR;

Assignee:

LG INNOTEK CO., LTD., Seoul, KR;

Attorney:

KED & Associates LLP

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 31/07 (2012.01); H01L 31/10 (2006.01); H01L 33/06 (2010.01); H01L 33/10 (2010.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 31/075 (2012.01); H01L 31/105 (2006.01); H01L 27/15 (2006.01); H01L 33/44 (2010.01); H01L 31/101 (2006.01);
U.S. Cl.
CPC ...
H01L 31/075 (2013.01); H01L 31/105 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/38 (2013.01); H01L 33/46 (2013.01); H01L 27/153 (2013.01); H01L 31/10 (2013.01); H01L 31/101 (2013.01); H01L 33/44 (2013.01); H01L 2933/0083 (2013.01); Y02E 10/50 (2013.01);
Abstract

A semiconductor device of an embodiment includes first and second semiconductor layers having different conductivity types; a third semiconductor layer interposed between the first and second semiconductor layers; and a fourth semiconductor layer interposed between the second and third semiconductor layers, having a lower doping concentration than that of the first semiconductor layer and the same conductivity type as the first semiconductor layer, wherein the difference in doping concentration between the first semiconductor layer and the fourth semiconductor layer may be greater than 4×E18 atoms/cm.

Find Patent Forward Citations

Oh, Jung. (2020). Semiconductor device (U.S. Patent No. 10686091). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10686091

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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