The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2020

Filed:

May. 19, 2017
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Chungyi Kim, Seoul, KR;

Youngsung Yang, Seoul, KR;

Jaewoo Choi, Seoul, KR;

Mihee Heo, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0368 (2006.01); H01L 31/0745 (2012.01); H01L 31/18 (2006.01); H01L 31/068 (2012.01); H01L 31/0747 (2012.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
H01L 31/03685 (2013.01); H01L 31/02167 (2013.01); H01L 31/03682 (2013.01); H01L 31/0682 (2013.01); H01L 31/0745 (2013.01); H01L 31/0747 (2013.01); H01L 31/182 (2013.01); H01L 31/1804 (2013.01); H01L 31/1824 (2013.01); H01L 31/1868 (2013.01); Y02E 10/546 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

Disclosed is a solar cell including a control passivation film on one surface of a semiconductor substrate, and being formed of a dielectric material; and a semiconductor layer on the control passivation film, wherein the semiconductor layer including a first conductive region having a first conductive type and a second conductive region having a second conductive type opposite to the first conductive type. The semiconductor substrate includes a diffusion region including at least one of a first diffusion region and a second diffusion region adjacent to the control passivation film, wherein the first diffusion region being locally formed to correspond to the first conductive region and having a doping concentration lower than a doping concentration of the first conductive region, wherein the second diffusion region being locally formed to correspond to the second conductive region and having a doping concentration lower than a doping concentration of the second conductive region.


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