The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Jul. 31, 2018
Imec Vzw, Leuven, BE;
Steve Stoffels, Haasrode, BE;
IMEC VZW, Leuven, BE;
Abstract
An enhancement-mode transistor and method for forming a gate of an enhancement-mode transistor are provided. The method includes: (a) providing a p-doped AlGaInN gate layer, consisting of a first part and a second part on top of the first part, above a p-doped AlGaInN channel layer of an enhancement-mode transistor under construction; and (b) providing a metal gate layer on the top surface of the second part, the metal gate layer being formed of a material such as to form a Schottky barrier with the second part, wherein providing the p-doped AlGaInN gate layer comprises the steps of: (a1) growing the first part above the p-doped AlGaInN channel layer of the enhancement-mode transistor under construction, the first part having an average Mg concentration of at most 3×10atoms/cm, and (a2) growing the second part on the first part, the second part having an average Mg concentration higher than 3×10atoms/cmand having a top surface having a Mg concentration higher than 6×10atoms/cm.