The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2020

Filed:

Apr. 30, 2019
Applicant:

Sony Corporation, Tokyo, JP;

Inventor:

Keiji Mabuchi, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/335 (2011.01); H01L 27/146 (2006.01); H04N 5/369 (2011.01); H04N 5/3745 (2011.01); H04N 5/357 (2011.01); H04N 9/04 (2006.01); H04N 5/378 (2011.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14605 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14601 (2013.01); H01L 27/14603 (2013.01); H01L 27/14607 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14641 (2013.01); H01L 27/14643 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01); H04N 5/335 (2013.01); H04N 5/3575 (2013.01); H04N 5/3696 (2013.01); H04N 5/378 (2013.01); H04N 5/37455 (2013.01); H04N 5/37457 (2013.01); H04N 9/045 (2013.01); H01L 27/14609 (2013.01); H01L 31/035272 (2013.01); H04N 5/357 (2013.01);
Abstract

A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.


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