The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Jan. 19, 2017
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Assignee:
CANON KABUSHIKI KAISHA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/3745 (2011.01); H04N 5/345 (2011.01); H04N 5/378 (2011.01); H04N 3/14 (2006.01); H04N 5/335 (2011.01); H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14605 (2013.01); H01L 27/14603 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14641 (2013.01); H01L 27/14645 (2013.01); H01L 27/14806 (2013.01); H01L 27/14812 (2013.01); H04N 3/155 (2013.01); H04N 3/1568 (2013.01); H04N 5/335 (2013.01); H04N 5/3452 (2013.01); H04N 5/378 (2013.01); H04N 5/37452 (2013.01); H04N 5/37457 (2013.01);
Abstract
An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes with plural transfer MOSFETs arranged respectively corresponding to the plural photodiodes, and a common MOSFET that amplifies and outputs signals read from the plural photodiodes. The unit cell includes reset and selecting MOSFETs. Within the unit cell, each pair of photodiode and corresponding transfer MOSFET has translational symmetry with respect to one another.