The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2020

Filed:

Apr. 02, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Moon Kyu Song, Goyang-si, KR;

Ki Yoon Kang, Seoul, KR;

Jae Hoon Jang, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 27/11575 (2017.01); H01L 27/11556 (2017.01); H01L 27/11578 (2017.01); H01L 27/11551 (2017.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/562 (2013.01); H01L 27/1157 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11575 (2013.01); H01L 27/11578 (2013.01);
Abstract

A vertical memory device includes a substrate including a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, a channel structure on the cell array region and extending in a direction perpendicular to an upper surface of the substrate while penetrating through the plurality of gate electrode layers, a dummy channel structure on the connection region and extending in the direction perpendicular to the upper surface of the substrate while penetrating through at least a portion of the plurality of gate electrode layers, and a support insulating layer between a portion of the plurality of gate electrode layers and the dummy channel structure. The plurality of gate electrode form a stepped structure on the connection region.


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