The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Jan. 08, 2019
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Kiseok Lee, Hwaseong-si, KR;
Keunnam Kim, Yongin-si, KR;
Eun A Kim, Seoul, KR;
Eunjung Kim, Daegu, KR;
Jeongseop Shim, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed are semiconductor devices and methods of manufacturing the same. The method comprises forming an active structure including a plurality of active patterns, a device isolation layer defining the active patterns, and a gate structure across the active patterns and extending in a first direction, forming a first mask pattern on the active structure, and forming a trench by using the first mask pattern as an etching mask to pattern the active structure. Forming the first mask pattern comprises forming in a first mask layer a plurality of first openings extending in a second direction intersecting the first direction, and forming in the first mask layer a plurality of second openings extending in a third direction intersecting the first and second directions.