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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10685959 B1

PDFFull Text
Date of Patent:
Jun. 16, 2020

Filed:

Dec. 14, 2018

Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dong-Kak Lee, Seoul, KR;

Joon Kim, Seoul, KR;

Bong-hyun Kim, Incheon, KR;

Han-Jin Lim, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Mohammad M Choudhry

Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 27/092 (2006.01); H01L 21/28 (2006.01); H01L 21/8238 (2006.01); H01L 27/108 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/28044 (2013.01); H01L 21/28061 (2013.01); H01L 21/823835 (2013.01); H01L 21/823842 (2013.01); H01L 27/10808 (2013.01); H01L 27/10823 (2013.01); H01L 27/10873 (2013.01); H01L 29/1037 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/4925 (2013.01); H01L 29/4933 (2013.01); H01L 29/4941 (2013.01); H01L 29/66575 (2013.01); H01L 29/78 (2013.01);
Abstract

An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.

Find Patent Forward Citations

Lee, Dong-Kak. (2020). Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure (U.S. Patent No. 10685959). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10685959

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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