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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10685953 B1

PDFFull Text
Date of Patent:
Jun. 16, 2020

Filed:

Jul. 17, 2018

Integrated semiconductor device having isolation structure for reducing noise

Applicant:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Inventors:

Hyun Chul Kim, Chilgok-gun, KR;

Hee Baeg An, Cheongju-si, KR;

In Chul Jung, Daegu, KR;

Jung Hwan Lee, Cheongju-si, KR;

Kyung Ho Lee, Cheongju-si, KR;

Assignee:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Attorney:

NSIP Law

Primary Examiner:

Brian Turner

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 31/113 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 27/22 (2006.01); H01L 21/8238 (2006.01); H01L 21/761 (2006.01); H01L 43/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 21/761 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 27/22 (2013.01); H01L 43/065 (2013.01); H01L 21/823814 (2013.01);
Abstract

An integrated semiconductor device includes a first transistor and a second transistor formed on a semiconductor substrate, and an isolation structure located adjacent to the transistors, including deep trenches, trapping regions formed between the deep trenches, and trench bottom doping regions formed at the end of each of the deep trenches, wherein each of the trapping regions includes a buried layer, a well region formed on the buried layer, and a highly doped region formed on the well region.

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