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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10685844 B1

PDFFull Text
Date of Patent:
Jun. 16, 2020

Filed:

Jul. 16, 2018

Hardmask composition, method of forming pattern by using the hardmask composition, and hardmask formed using the hardmask composition

Applicants:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Research & Business Foundation Sungkyunkwan University, Suwon-si, Gyeonggi-do, KR;

Inventors:

Sangwon Kim, Seoul, KR;

Changsik Song, Seoul, KR;

Dongcheol Jeong, Suwon-si, KR;

Minsu Seol, Seoul, KR;

Hyeonjin Shin, Suwon-si, KR;

Dongwook Lee, Suwon-si, KR;

Taewoo Kim, Suwon-si, KR;

Juhyen Lee, Suwon-si, KR;

Hyejin Cho, Suwon-si, KR;

Assignees:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Research & Business Foundation, Sungkyunkwan University, Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Igwe U Anya

Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 29/16 (2006.01); C07B 37/12 (2006.01); G03F 7/004 (2006.01); H01L 21/311 (2006.01); G03F 7/16 (2006.01); G03F 7/027 (2006.01); H01L 21/033 (2006.01); G03F 7/09 (2006.01); C08L 101/02 (2006.01); B82Y 30/00 (2011.01); C07C 15/20 (2006.01); C07C 39/14 (2006.01); C07C 63/337 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); C07B 37/12 (2013.01); G03F 7/0043 (2013.01); G03F 7/027 (2013.01); G03F 7/094 (2013.01); G03F 7/168 (2013.01); H01L 21/0332 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01); H01L 29/1606 (2013.01); B82Y 30/00 (2013.01); C07C 15/20 (2013.01); C07C 39/14 (2013.01); C07C 63/337 (2013.01); C08L 101/02 (2013.01); H01L 29/66575 (2013.01);
Abstract

Provided are a hardmask composition, a method of forming a pattern using the hardmask composition, and a hardmask formed using the hardmask composition. The hardmask composition includes a polar nonaqueous organic solvent and one of: i) a mixture of graphene quantum dots and at least one selected from a diene and a dienophile, ii) a Diels-Alder reaction product of the graphene quantum dots and the at least one selected from a diene and a dienophile, iii) a thermal treatment product of the Diels-Alder reaction product of graphene quantum dots and the at least one selected from a diene and a dienophile, or iv) a combination thereof.

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