logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10685835 B1

PDFFull Text
Date of Patent:
Jun. 16, 2020

Filed:

Nov. 01, 2016

Iii-nitride tunnel junction with modified p-n interface

Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Benjamin P. Yonkee, Goleta, CA (US);

Erin C. Young, Santa Barbara, CA (US);

John T. Leonard, San Jose, CA (US);

Tal Margalith, Santa Barbara, CA (US);

James S. Speck, Santa Barbara, CA (US);

Steven P. DenBaars, Goleta, CA (US);

Shuji Nakamura, Santa Barbara, CA (US);

Assignees:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);

KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY (KACST), , SA;

Attorney:

Gates & Cooper LLP

Primary Examiner:

Nikolay K Yushin

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/00 (2006.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 29/15 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 29/36 (2006.01); H01L 29/885 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 29/88 (2006.01); H01L 33/04 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02584 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02581 (2013.01); H01L 21/02631 (2013.01); H01L 29/15 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/365 (2013.01); H01L 29/885 (2013.01); H01L 31/03044 (2013.01); H01L 31/035236 (2013.01); H01L 31/1856 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 29/88 (2013.01); H01L 33/04 (2013.01);
Abstract

A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).

Find Patent Forward Citations

Loading…