The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
May. 21, 2018
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Assignee:
ASM IP Holdings B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/02 (2006.01); C23C 16/14 (2006.01); C23C 16/28 (2006.01); C23C 16/455 (2006.01); C23C 16/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); C23C 16/0272 (2013.01); C23C 16/14 (2013.01); C23C 16/24 (2013.01); C23C 16/28 (2013.01); C23C 16/401 (2013.01); C23C 16/407 (2013.01); C23C 16/45523 (2013.01); H01L 21/0262 (2013.01); H01L 21/02271 (2013.01); H01L 21/02381 (2013.01); H01L 21/02452 (2013.01); H01L 21/02535 (2013.01); H01L 21/02658 (2013.01);
Abstract
A method for forming a forming a silicon germanium tin (SiGeSn) layer is disclosed. The method may include, providing a substrate within a reaction chamber, exposing the substrate to a pre-deposition precursor pulse, which comprises tin tetrachloride (SnCl), exposing the substrate to a deposition precursor gas mixture comprising a hydrogenated silicon source, germane (GeH), and tin tetrachloride (SnCl), and depositing the silicon germanium tin (SiGeSn) layer over a surface of the substrate. Semiconductor device structures including a silicon germanium tin (SiGeSn) layer formed by the methods of the disclosure are also provided.