The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Nov. 29, 2018
The Regents of the University of California, Oakland, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
A method for synthesis of high anisotropy L1FeNi (tetrataenite) thin films is provided that combines physical vapor deposition via atomic layer sputtering and rapid thermal annealing with extreme heating and cooling speeds. The methods can induce L1-ordering in FeNi thin films. The process uses a base composite film of a support substrate, a seed layer, a multilayer thin film of FeNi with alternating single atomic layers of Fe and Ni that mimics the atomic plane of the final L1FeNi alloy, and a capping layer. The Fe and Ni bilayers are grown on top of a Si substrate with a thermally oxidized SiOseed layer to mechanically strain the sample during rapid thermal annealing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile