The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
May. 08, 2019
Applicant:
Socionext Inc., Kanagawa, JP;
Inventor:
Shinichi Moriwaki, Kanagawa, JP;
Assignee:
SOCIONEXT INC., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/41 (2006.01); G11C 11/418 (2006.01); G11C 11/412 (2006.01); G11C 11/419 (2006.01); G11C 8/16 (2006.01); G11C 7/02 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/418 (2013.01); G11C 11/412 (2013.01); G11C 11/419 (2013.01); G11C 7/02 (2013.01); G11C 7/1015 (2013.01); G11C 8/16 (2013.01);
Abstract
Disclosed is a semiconductor storage device having a dual-port SRAM cell with a smaller area and low-current consumption and securing a good static noise margin. The semiconductor storage device includes a memory cell circuit constituting the dual port SRAM cell comprised of six transistors. When driving the first or second word line, a word line driver circuit lowers a high-level voltage which is to be output to the driven word line such that the high-level voltage is lower than a high-level voltage which is to be output to both of the first and second word lines when driving both the first and second word lines.