The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2020

Filed:

Oct. 23, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Ji-hyun Jeong, Hwaseong-si, KR;

Jae-hyun Park, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01); G11C 5/06 (2006.01); H01L 27/24 (2006.01); G11C 5/02 (2006.01); G11C 13/00 (2006.01); H01L 27/22 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 5/063 (2013.01); G11C 5/025 (2013.01); G11C 13/0023 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); H01L 27/224 (2013.01); H01L 27/228 (2013.01); H01L 27/2427 (2013.01); H01L 27/2481 (2013.01); G11C 2213/52 (2013.01); G11C 2213/71 (2013.01); G11C 2213/75 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01);
Abstract

A memory device includes a first cell block on a substrate at a first level, and a second cell block on the substrate at a second level different from the first level. Each of the first and second cell blocks includes a word line extending in a first direction that is parallel to a top surface of the substrate, a word line contact connected to a center point of the word line, a bit line extending in a second direction that is parallel to the top surface of the substrate and intersects the first direction, a bit line contact connected to a center point of the bit line, and a memory cell between the word and bit lines. The second cell block is offset from the first cell block in at least one of the first and second directions.


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