The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2020

Filed:

Jan. 29, 2019
Applicant:

Ciena Corporation, Hanover, MD (US);

Inventors:

Ian Nicholas Woods, Nepean, CA;

Kelvin Prosyk, Luskville, CA;

Assignee:

Ciene Corporation, Hanover, MD (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/122 (2006.01); G02B 6/28 (2006.01); G02B 6/42 (2006.01); G02F 1/225 (2006.01); G02F 1/025 (2006.01); G02F 1/21 (2006.01);
U.S. Cl.
CPC ...
G02B 6/1228 (2013.01); G02B 6/2813 (2013.01); G02B 6/4201 (2013.01); G02F 1/025 (2013.01); G02F 1/225 (2013.01); G02F 2001/217 (2013.01);
Abstract

A method includes obtaining a Photonic Integrated Circuit (PIC) with a butt-joint between a first core and a second core, wherein the butt-joint includes a poor quality region, wherein the first core is associated with a first optical device and the second core is associated with a second optical device, and wherein the first optical device and the second optical device are each on the PIC; etching away at least part of the poor quality region to form an etch trench between the first core and the second core; and growing an interconnect core between the first core and the second core in the etch trench.


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