The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2020

Filed:

Aug. 25, 2016
Applicant:

Ams Ag, Unterpremstaetten, AT;

Inventors:

Jochen Kraft, Bruck An Der Mur, AT;

Joerg Siegert, Graz, AT;

Assignee:

ams AG, Unterpremstaetten, AT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H04B 10/80 (2013.01); G02B 6/43 (2006.01); G02B 6/42 (2006.01); G02B 6/13 (2006.01); H01L 21/48 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); G02B 6/34 (2006.01);
U.S. Cl.
CPC ...
G02B 6/12004 (2013.01); G02B 6/13 (2013.01); G02B 6/428 (2013.01); G02B 6/43 (2013.01); H01L 21/4857 (2013.01); H01L 23/5226 (2013.01); H01L 24/08 (2013.01); H01L 24/89 (2013.01); H04B 10/801 (2013.01); G02B 6/34 (2013.01); G02B 6/4214 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12107 (2013.01); H01L 23/481 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/131 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/80896 (2013.01);
Abstract

A semiconductor device has a semiconductor substrate and a first metallization stack arranged on the substrate. The substrate has and/or carries a plurality of electronic circuit elements. The first metallization stack has electrically insulating layers and at least one metallization layer. The semiconductor device further has a second metallization stack arranged on the first metallization stack and comprising further electrically insulating layers and an optical waveguide layer. The optical waveguide layer has at least one optical waveguide structure. Furthermore, one of the electrically insulating layers and one of the further electrically insulating layers are in direct contact with each other and form a pair of directly bonded layers.


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