The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2020

Filed:

Feb. 04, 2015
Applicant:

National University of Singapore, Singapore, SG;

Inventors:

Barbaros Ozyilmaz, Singapore, SG;

Andreas Volker Stier, Singapore, SG;

Chee Tat Toh, Singapore, SG;

Antonio Helio Castro Neto, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); C30B 25/10 (2006.01); C01B 32/188 (2017.01); C01B 32/186 (2017.01); C23C 16/48 (2006.01); C30B 1/02 (2006.01); C30B 25/18 (2006.01); C30B 29/02 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C30B 25/105 (2013.01); C01B 32/186 (2017.08); C01B 32/188 (2017.08); C23C 16/483 (2013.01); C30B 1/02 (2013.01); C30B 25/18 (2013.01); C30B 29/02 (2013.01); H01L 29/1606 (2013.01); B82Y 40/00 (2013.01);
Abstract

A method of making graphene includes providing a seed gas in the presence of a metallic substrate, providing a pulsed, ultraviolet laser beam, and moving the substrate or the laser beam relative to the other, thereby advancing a graphene crystallization front and forming an ordered graphene structure. In some instances, the substrate can have a surface with two-fold atomic symmetry. A method of recrystallizing graphene includes providing a pulsed, ultraviolet laser beam to a polycrystalline graphene sheet.


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