The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Mar. 17, 2017
Lg Chem, Ltd., Seoul, KR;
Eunsu Jang, Daejeon, KR;
Yoo Seok Kim, Daejeon, KR;
Jaesung Kim, Daejeon, KR;
Jeong Kyu Kim, Daejeon, KR;
Jin Hyoung Yoo, Daejeon, KR;
Jung Woo Lee, Daejeon, KR;
Ye Hoon Im, Daejeon, KR;
Jun Won Choi, Daejeon, KR;
LG CHEM, LTD., Seoul, KR;
Abstract
A method for manufacturing polysilicon, according to the present invention, is capable of manufacturing polysilicon with high purity more efficiently in such a manner that a high-temperature and high-speed air stream is formed at the center of a reaction tube, and a high-temperature region may be formed by a vortex formed by the high-temperature and high-speed air stream, so that a raw gas supplied from the side wall of the reaction tube flows by the guiding of the vortex, thereby increasing a stay time and a reaction time of the raw gas within the reaction tube. Furthermore, since the inner wall of the reaction tube is provided with a heat release means, the rapid cooling of a silicon crystal deposited on the inner wall of the reaction tube can induce a columnar crystal in which the silicon crystal is solidified in a direction perpendicular to a crystal face, and it is easy to desorb the silicon crystal produced by rapid heat release via the inner wall of the reaction tube.