The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Nov. 09, 2018
Applicant:

Murata Manufacturing Co., Ltd., Kyoto, JP;

Inventor:

Hideyuki Satou, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 1/02 (2006.01); H03F 3/213 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0216 (2013.01); H03F 1/0261 (2013.01); H03F 3/195 (2013.01); H03F 3/213 (2013.01); H03F 3/245 (2013.01); H03F 2200/102 (2013.01); H03F 2200/21 (2013.01); H03F 2200/451 (2013.01);
Abstract

A power amplifier circuit includes a first transistor having a base to which a radio frequency (RF) signal is supplied and a collector to which a variable power-supply voltage corresponding to a level of the RF signal is supplied, and being configured to amplify the RF signal; a bias circuit including a second transistor configured to supply a bias current to the base of the first transistor; and an adjustment circuit configured to cause the bias current to be supplied to the base of the first transistor to decrease with decrease in the variable power-supply voltage by causing a current to be supplied to a base of the second transistor to decrease.


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