The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
May. 01, 2017
Massachusetts Institute of Technology, Cambridge, MA (US);
Jonathan T. Bessette, Essex Junction, VT (US);
Yan Cai, Cambridge, MA (US);
Rodolfo E. Camacho-Aguilera, Cambridge, MA (US);
Jifeng Liu, Hanover, NH (US);
Lionel Kimerling, Concord, MA (US);
Jurgen Michel, Arlington, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
In a method for electrically doping a semiconducting material, a layer of germanium is formed having a germanium layer thickness, while in situ incorporating phosphorus dopant atoms at a concentration of at least about 5×10cmthrough the thickness of the germanium layer during formation of the germanium layer. Additional phosphorus dopant atoms are ex situ incorporated through the thickness of the germanium layer, after formation of the germanium layer, to produce through the germanium layer thickness a total phosphorus dopant concentration of at least about 2×10cm.