The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Jan. 15, 2015
Applicant:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Inventors:
Stephen R. Forrest, Ann Arbor, MI (US);
Kyusang Lee, Ann Arbor, MI (US);
Dejiu Fan, Ann Arbor, MI (US);
Assignee:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/18 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/0687 (2012.01); H01L 31/0693 (2012.01); H01L 31/0735 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1896 (2013.01); H01L 31/03046 (2013.01); H01L 31/035236 (2013.01); H01L 31/0687 (2013.01); H01L 31/0693 (2013.01); H01L 31/0735 (2013.01); H01L 31/1844 (2013.01); H01L 31/1892 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract
The present disclosure relates to methods and growth structures for making thin-film electronic and optoelectronic devices, such as flexible photovoltaic devices, using epitaxial lift-off (ELO). In particular, disclosed herein are wafer protection schemes that preserve the integrity of the wafer surface during ELO and increase the number of times that the wafer may be used for regrowth. The wafer protection schemes use growth structures that include at least one superlattice layer.