The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Nov. 14, 2016
Applicant:

Uvic Industry Partnerships Inc., Victoria, CA;

Inventors:

Thomas E. Darcie, Victoria, CA;

Reuven Gordon, Victoria, CA;

Afshin Jooshesh, Victoria, CA;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 27/14 (2006.01); H01L 31/00 (2006.01); G01J 5/08 (2006.01); G01J 5/28 (2006.01); G01J 1/04 (2006.01); G01J 1/42 (2006.01); H01L 27/144 (2006.01); H01L 31/0304 (2006.01); H01L 31/09 (2006.01); H01Q 1/38 (2006.01); H01Q 9/16 (2006.01); H01Q 9/28 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0232 (2013.01); G01J 1/0407 (2013.01); G01J 1/42 (2013.01); G01J 5/0837 (2013.01); G01J 5/28 (2013.01); H01L 27/14 (2013.01); H01L 27/144 (2013.01); H01L 31/00 (2013.01); H01L 31/0304 (2013.01); H01L 31/09 (2013.01); H01Q 1/38 (2013.01); H01Q 9/16 (2013.01); H01Q 9/285 (2013.01);
Abstract

Disclosed are systems and methods for improving applications involving the generation and detection of electromagnetic radiation at terahertz (THz) frequencies. Embodiments of the systems and methods include the fabrication and use of plasmonic devices that enhance light-matter interaction at the nanometer scale by extreme focusing with nanostructured metals. This plasmonic enhancement is used to produce high efficiency THz photoconductive switches that combine the benefits of low-temperature grown GaAs while using mature 1.55 μm femtosecond lasers operating with photon energy below the GaAs band-gap.


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