The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Oct. 02, 2018
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Dong Yean Oh, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); B82Y 10/00 (2011.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 21/268 (2006.01); H01L 21/28 (2006.01); H01L 21/30 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); B82Y 10/00 (2013.01); H01L 21/268 (2013.01); H01L 21/28105 (2013.01); H01L 21/3003 (2013.01); H01L 29/0673 (2013.01); H01L 29/1041 (2013.01); H01L 29/167 (2013.01); H01L 29/401 (2013.01); H01L 29/4232 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/4983 (2013.01); H01L 29/66439 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/775 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78681 (2013.01); H01L 29/78684 (2013.01);
Abstract
In a method of manufacturing a semiconductor integrated circuit device, an active region including a nano-wire may be formed on a bulk insulating layer. A hard mask pattern may be formed to partially expose the nano-wire. A work function-controlling region may be formed on the nano-wire exposed through the hard mask pattern. The hard mask pattern may be removed. A gate insulating layer may be formed on the nano-wire. A gate may be formed to surround the nano-wire.