The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Jun. 15, 2018
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Wonhwa Lee, Bucheon-si, KR;
Gary H. Loechelt, Tempe, AZ (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
A power semiconductor device includes a semiconductor layer having a first conductivity type. A trench is defined within the semiconductor layer, the trench having an opening, a sidewall and a base. A pillar is provided below the trench and has a second conductivity type that is different than the first conductivity type. A metal layer is provided over the sidewall of the trench, the metal layer contacting the semiconductor layer at the sidewall of the trench to form a Schottky interface of a Schottky diode. A first electrode is provided over a first side of the semiconductor layer. A second electrode is provided over a second side of the semiconductor layer.